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ON Semiconductort
SOD-123 Schottky Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin-offs of our popular MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. * Extremely Low Minority Carrier Lifetime * Very Low Capacitance * Low Reverse Leakage
MMSD301T1 MMSD701T1
ON Semiconductor Preferred Devices
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CASE 425-04, STYLE 1 SOD-123
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range MMSD301T1 MMSD701T1 Symbol VR PF TJ Tstg Value 30 70 225 -55 to +125 -55 to +150 Unit Vdc mW C C 1 Cathode 2 Anode
DEVICE MARKING
MMSD301T1 = XT, MMSD701T1 = XH
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 A) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 IR MMSD301T1 MMSD701T1 VF MMSD301T1 MMSD701T1 -- -- -- -- 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 -- -- 13 9.0 200 200 nAdc nAdc Vdc -- -- 0.9 0.5 1.5 1.0 -- -- 0.9 0.5 1.5 1.0 pF Symbol V(BR)R 30 70 -- -- -- -- pF Min Typ Max Unit Volts
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
September, 2001 - Rev. 2
Publication Order Number: MMSD301T1/D
MMSD301T1 MMSD701T1
TYPICAL CHARACTERISTICS MMSD301T1
2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MMSD301T1 500 400 KRAKAUER METHOD 300 200 100 0 MMSD301T1
0
10
20
40 60 30 50 70 IF, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10 MMSD301T1 IR, REVERSE LEAKAGE (m A) 1.0 TA = 100C TA = 75C
100 IF, FORWARD CURRENT (mA)
MMSD301T1 TA = -40C TA = 85C
10
0.1
0.01
TA = 25C
1.0 TA = 25C
0.001
0
6.0
12 18 VR, REVERSE VOLTAGE (VOLTS)
24
30
0.1
0.2
0.4
0.6 0.8 VF, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
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MMSD301T1 MMSD701T1
TYPICAL CHARACTERISTICS MMSD701T1
2.0 CT, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 MMSD701T1 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MMSD701T1 400 KRAKAUER METHOD 300 200 100 0
0
5.0
10
15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
20
30 50 70 40 60 IF, FORWARD CURRENT (mA)
80
90
100
Figure 5. Total Capacitance
Figure 6. Minority Carrier Lifetime
10
MMSD701T1 TA = 100C TA = 75C
100 IF, FORWARD CURRENT (mA)
MMSD701T1
IR, REVERSE LEAKAGE (m A)
1.0
10 TA = 85C TA = -40C
0.1
1.0 TA = 25C
0.01
TA = 25C
0.001
0
10
20 30 VR, REVERSE VOLTAGE (VOLTS)
40
50
0.1
0.2
0.4
0.8 1.2 VF, FORWARD VOLTAGE (VOLTS)
1.6
2.0
Figure 7. Reverse Leakage
Figure 8. Forward Voltage
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MMSD301T1 MMSD701T1 INFORMATION FOR USING THE SOD-123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.91 0.036
2.36 0.093 4.19 0.165
SOD-123
SOD-123 POWER DISSIPATION The power dissipation of the SOD-123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD-123 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOD-123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD-123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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1.22 0.048
mm inches
MMSD301T1 MMSD701T1
PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE C
A C H
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --0.000 0.004 --0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85
K
AAA AAA
2
1
B
E J
D
STYLE 1: PIN 1. CATHODE 2. ANODE
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MMSD301T1 MMSD701T1
Notes
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MMSD301T1 MMSD701T1
Notes
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MMSD301T1 MMSD701T1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MMSD301T1/D

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